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APT34F60B APT34F60S
600V, 34A, 0.21 Max, trr 250ns
N-Channel FREDFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
TO
-2
47
D3PAK
APT34F60B
APT34F60S
D
Single die FREDFET
G S
FEATURES
* Fast switching with low EMI * Low trr for high reliability * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full full bridge * Half bridge * PFC and other boost converter * Buck converter * Single and two switch forward * Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 34 21 124 30 930 17
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight 0.22 6.2 10 1.1 -55 0.15 150 300 Min Typ Max 624 0.20 Unit W C/W
C
9-2006 050-8074 Rev A
oz g in*lbf N*m
Torque
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ = 25C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 17A VGS = VDS, ID = 1mA VDS = 600V VGS = 0V TJ = 25C TJ = 125C
APT34F60B_S
Typ 0.57 0.17 4 -10 Max Unit V V/C V mV/C A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 600
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
3
0.21 5 100 500 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25C unless otherwise specified
Test Conditions
VDS = 50V, ID = 17A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 32 6640 70 610 325
Max
Unit S
pF
5
VGS = 0V, VDS = 0V to 400V
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 17A, VDS = 300V Resistive Switching VDD = 400V, ID = 17A RG = 4.7 6 , VGG = 15V
170 165 36 70 37 43 115 34 nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 100
Unit A
G S
TJ = 25C TJ = 125C
124 1.0 250 525 10 25 9 12 20 V ns C A V/ns
ISD = 17A, TJ = 25C, VGS = 0V
ISD = 17A 3 diSD/dt = 100A/s
TJ = 25C TJ = 125C TJ = 25C TJ = 125C
ISD 17A, di/dt 1000A/s, VDD = 400V, TJ = 125C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 6.44mH, RG = 4.7, IAS = 17A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%.
9-2006 Rev A
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.03E-8/VDS^2 + 2.80E-8/VDS + 9.89E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-8074
120 100 ID, DRAIN CURRENT (A)
V
GS
= 10V
60
TJ = -55C
APT34F60B_S
T = 125C
J
V
GS
= 7&8V
50 ID, DRIAN CURRENT (A) 40 30 20
5.5V 6V
80
TJ = 25C
60 40 20 0
TJ = 150C
TJ = 125C
10
5V
30 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics
NORMALIZED TO VGS = 10V @ 17A
0
0
30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.0 2.5 2.0 1.5 1.0 0.5
120 100 ID, DRAIN CURRENT (A) 80
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
TJ = -55C
60
TJ = 25C
40
TJ = 125C
20 0
0 25 50 75 100 125 150 0 -55 -25 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 60 50 40 30 20 10 0
TJ = -55C
TJ = 25C
TJ = 125C
0
8 7 6 5 4 3 2 1 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics
20,000 10,000
Ciss
gfs, TRANSCONDUCTANCE
C, CAPACITANCE (pF)
1000
Coss
100 Crss
0
5
10 15 20 25 30 35 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current
40
600 500 400 300 200 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 0 120 ISD, REVERSE DRAIN CURRENT (A) 100 80
TJ = 25C
10
16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12 10 8 6 4 2
ID = 17A
VDS = 120V
VDS = 300V
60
TJ = 150C
050-8074
250 200 150 100 50 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0
0
1.5 1.2 0.9 0.6 0.3 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0
0
Rev A
20
9-2006
VDS = 480V
40
200 100
IDM
200 100
IDM
APT34F60B_S
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
10
13s
100s
Rds(on)
10
13s
100s
Rds(on)
1
1ms 10ms 100ms
1
TJ = 150C TC = 25C
1ms
10ms
0.1
TJ = 125C TC = 75C
DC line
1
800 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area
0.1
Scaling for Different Case & Junction Temperatures: 100ms ID = ID(T = 25C)*(TJ - TC)/125 C DC line
800 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 1
TJ (C)
0.0846 Dissipated Power (Watts) 0.0122 0.249
TC (C)
0.116 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Figure 11, Transient Thermal Impedance Model 0.25 ZJC, THERMAL IMPEDANCE (C/W)
0.20
D = 0.9
0.15
0.7 0.5 0.3
Note:
PDM
0.10
ZEXT
t1 t2
0.05
0.1 0.05
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t1 = Pulse Duration
t
0
10-5
10-1 10-2 10-3 RECTANGULAR PULSE DURATION (seconds) Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 10-4
1.0
TO-247 (B) Package Outline
e3 100% Sn Plated
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D3PAK Package Outline
Drain (Heat Sink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
1.04 (.041) 1.15(.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
9-2006
0.40 (.016) 0.79 (.031)
19.81 (.780) 20.32 (.800)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Gate Drain Source
Heat Sink (Drain) and Leads are Plated
Rev A
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
050-8074
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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